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| SMD Type Silicon NPN Triple Diffused Type 2SD2414 Transistors TO-263 + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A) + .2 8 .7 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 100 80 5 7 1 1.5 40 150 -55 to +125 Unit V V V A A W W 5 .6 0 1 : Base 2 : Collector 3 : Emitter www.kexin.com.cn 1 SMD Type 2SD2414 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter sustaining voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Storage time Turn-on Time Storage time Storage Time Storage time Fall Time Symbol ICBO IEBO VCEO hFE Testconditons VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB=0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 4 A VCE (sat) IC = 4A, IB = 0.4A VBE (sat) IC =4A, IB = 0.4A fT Cob ton tstg tf VCE=4V,IC=1A VCB=10V,IE=0,f=1MHz Transistors Min Typ Max 5 5 Unit iA mA V 80 100 30 0.25 0.9 10 200 0.4 2.5 0.5 0.5 1.4 320 V V MHz pF is 2 www.kexin.com.cn |
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